Technical University of Lodz

Department of Semiconductor
               and Optoelectronics Devices

Finished Project

title:High temperature processes of diffusive doping in SiC
supervisor:PhD Andrzej Kubiak
years:2006 - 2008
description:The main task of this project is to undertake the comprehensive research program on the high temperature technology for silicon carbide. The project focuses on the SiC surface layer measurements, especially its changes caused by high temperature sublimation and resublimation phenomena, ion dopants migration and post implantation annealing of dopants. The expected result is the first p-n diode fabricated by thermal diffusion of dopants in SiC. Experiments are going to be supported by computer simulations with the aid of specialized CAD software.


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