Technical University of Lodz

Department of Semiconductor
               and Optoelectronics Devices

Finished Project

title:Developing technology for p-i-n diode manufacturing in the SiC substrate - New technologies based on silicon carbide and their applications in high frequency, high power and high temperature electronics
supervisor:Prof. Zbigniew Lisik
comments:Part of the project "New technologies based on silicon carbide and their applications in high frequency, high power and high temperature electronics"
type:
years:2007 - 2010
description:P-i-N diode is one of the basic bipolar rectifying devices in electronic circuits. The diode needs to be characterised by high blocking voltages, high forward biased currents and short reverse recovery times. The growing requirements start to exceed the capabilities of silicon technology. Hence, the replacement of silicon with silicon carbide (SiC) is expected to be the main trend in development of these devices. The complexity of SiC technology still requires further research. The P-i-N prototype diodes are expected to be the final result of the project.
www: http://sic.dsod.pl

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